INDIGO Home University of Illinois at Urbana-Champaign logo uic building uic pavilion uic student center

Atomic Scale STEM/EELS and First Principles Studies of Oxide-Semiconductor Interfaces

Show full item record

Bookmark or cite this item: http://hdl.handle.net/10027/11300

Files in this item

File Description Format
PDF Qiao_Qiao.pdf (22MB) (no description provided) PDF
Title: Atomic Scale STEM/EELS and First Principles Studies of Oxide-Semiconductor Interfaces
Author(s): Qiao, Qiao
Advisor(s): Klie, Robert F.
Contributor(s): Ogut, Serdar; Schroeder, Andreas W.; Grein, Christoph; Yang, Zheng
Department / Program: Physics
Graduate Major: Physics
Degree Granting Institution: University of Illinois at Chicago
Degree: PhD, Doctor of Philosophy
Genre: Doctoral
Subject(s): Scanning Transmission Electron Microscopy Electron Energy Loss Spectroscopy Density Functional Theory Thin Film
Abstract: Ultrathin transition-meal oxide films on polar substrates have attracted increasing attention in recent years, due to the emergence of novel interfacial phases, not seen in the bulk of either material. In this study, I have combined aberration-corrected atomic-resolution Z-contrast imaging, electron energy loss spectroscopy (EELS) with first-principles density functional theory calculations to examined the atomic and electronic structures of epitaxially grown, ultrathin SrTiO3 (100) films on GaAs (001). I find that the interface is atomically abrupt and no surface reconstruction of the GaAs (001) surface is observed. Using atomic-column resolved EELS, we show that Ti diffuses into the first few monolayers of GaAs and we will present evidence for the formation of As-oxides at the interface depending on the thin film growth conditions. First-principles DFT calculations will be used to analyze the formation energies of Ti-related impurity defects in the bulk and surface regions of GaAs, as well as the stability of any surface reconstruction at the SrTiO3/GaAs interface. These findings are used to explain transport behavior of the SrTiO3 films as a function of deposition conditions. Based on the fundamental understanding of the SrTiO3/GaAs interfaces, the epitaxial properties of ferroelectric BaTiO3 grown on GaAs with a SrTiO3 buffer layer have been extensively studied. The BaTiO3 film is free of defects and exhibits an out of plane polarization, while the charge screening effects at both the BaTiO3/SrTiO3 and SrTiO3/GaAs interfaces have been observed using atomic-resolution HAADF and ABF imaging and EEL spectroscopy. Additionally, the dynamic charge transfer during in-situ polarization switching following the application of an electrical bias to the ferroelectric oxide will be discussed.
Issue Date: 2014-02-24
Genre: thesis
URI: http://hdl.handle.net/10027/11300
Rights Information: Copyright 2013 Qiao Qiao
Date Available in INDIGO: 2016-02-25
Date Deposited: 2013-12
 

This item appears in the following Collection(s)

Show full item record

Statistics

Country Code Views
United States of America 361
China 209
Russian Federation 41
Ukraine 29
Germany 10

Browse

My Account

Information

Access Key